BSH111,235 datasheet by NXP Semiconductors

Description N-channel enhancement mode field-effect transistor - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.335 A; Q<sub>gd</sub> (typ): 0.5 nC; R<sub>DS(on)</sub>: 4000@4.5V5000@2.5V mOhm; V<sub>DS</sub>max: 55 V; Package: SOT23 (TO-236AB); Container: Tape reel smd
Datasheet Type Original
RoHS Yes
Pb Free Unknown
Lifecycle Transferred
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Equivalent Parts !
Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

2N7002-T1-E3 BSH111 2N7002E-T1-E3 2N7002-T1-GE3 934056036215

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